HTB1-800 semihow rev.1.0 jan 2006 ? repetitive peak off- state voltage: 800v ? r.m.s on-state current (i t(rms) =1a) ? high commutation dv/dt features HTB1-800 bi-directional triode thyristor (triac) the triac HTB1-800 is suitable for ac switching application, phase control application such as heater cont rol, motor control, lighting control, and static switching relay. general description v drm = 800 v i t(rms) = 1.0a 1.t1 symbol 3.t2 2.gate absolute maximum ratings ( t a =25) s ymbol parame te r val ue uni ts v drm repetitive peak off-state voltage 800 v i t(rms) r.m.s on-state current (ta = 95 )1a v gm peak gate voltage 6 v i gm peak gate current 0.5 a p g(av) average gate power dissipation 0.1 w p gm peak gate power dissipation 1 w t stg storage temperature range -40 to +125 t j operating temperature -40 to +125 i tsm 9.1/10 a surge on-state current (one cycle, 50/60hz, peak, non repetitive) to-92 1. t1 2. gate 3. t2 2 1 3
HTB1-800 semihow rev.1.0 jan 2006 electrical characteristics ( t a =25 ) symbol parameter min typ max units 1+, 1-, 3- 5 ma 3+ 10 ma 1+, 1-, 3- 1.8 v 3+ 2.0 v v gd non trigger gate volt age 0.2 v (dv/dt)c crit ical rat e of rise of off-state voltage at communication 2.0 v/us i h holding current 10 ma i drm repetitive peak off- state current 0.5 ma v tm peak on-state voltage 1.6 v test conditions t j =125 , v d =1/2v drm i gt v d =6v, r l =10 ? gate trigger current it=6a, inst, measurement v gt t j =125 , v d =2/3v drm (di/dt)c=-0.5a/ms v d =v drm , single phase, half wave, t j =125 v d =6v, r l =10 ? gate trigger voltage thermal characteristics s ymbol parameter test conditions min typ max units r th(j-c) thermal resistance junction to case 50 / w r th(j-a) thermal resistance junction to ambient 120 / w
HTB1-800 semihow rev.1.0 jan 2006 performance curves on-state current (a) fig 2.on-state voltage on-state voltage (v) 10 -1 10 0 10 1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 fig 1. gate characteristics gate current (ma) gate voltage (v) 10 1 10 0 10 -1 10 0 10 1 10 2 10 3 rms on-state current (a) fig 3. gate trigger voltage vs. junction temperature junction temperature ( ) 10 1 0.1 -50 0 50 100 150 v gt (t ) v gt (25 ) fig 4. on state current vs. maximum power dissipation power dissipation (w) 1.5 1.2 0.9 0.6 0.3 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.0 fig 5. on state current vs. allowable case temperature rms on-state current (a) 0.2 0.4 0.6 0.8 1.0 130 110 100 80 70 60 50 40 1.2 0.0 allowable case temp ( ) time (cycles) 10 0 10 1 10 2 12 10 8 6 4 2 0 surge on-state current (a) fig 6. surge on-state current rating (non-repetitive) 5.0 v + gt1 v - gt1 v + gt1 v - gt3 120 90
HTB1-800 semihow rev.1.0 jan 2006 fig 7. gate trigger current vs. junction temperature junction temperature ( ) 10 1 0.1 -50 0 50 100 150 i gt (t ) i gt (25 ) time (sec) 10 -1 10 0 10 3 10 3 10 0 transient thermal impedance ( /w) fig8. transient thermal impedance 10 -2 10 1 fig 7. gate trigger characteristics test circuit rg v 10? a 6v rg v 10? a 6v rg v 10? a 6v rg v 10? a 6v test procedure i test procedure ii test procedure iii test procedure iv 10 2 10 1 10 2
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